Invention Grant
- Patent Title: Hybrid superconducting-magnetic memory cell and array
- Patent Title (中): 混合超导磁存储单元和阵列
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Application No.: US13346847Application Date: 2012-01-10
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Publication No.: US08547732B2Publication Date: 2013-10-01
- Inventor: John F Bulzacchelli , William J Gallagher , Mark B Ketchen
- Applicant: John F Bulzacchelli , William J Gallagher , Mark B Ketchen
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Vazken Alexanian
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
In one embodiment, the invention is a hybrid superconducting-magnetic memory cell and array. One embodiment of a memory cell includes a magnetoresistive element and at least one superconducting element wired in parallel with the magnetoresistive element. In a further embodiment, memory cells of the disclosed configuration are arranged to form a memory array.
Public/Granted literature
- US20120108434A1 HYBRID SUPERCONDUCTING-MAGNETIC MEMORY CELL AND ARRAY Public/Granted day:2012-05-03
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