Invention Grant
- Patent Title: Magnetoresistive element and magnetic memory
- Patent Title (中): 磁阻元件和磁记忆体
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Application No.: US13628724Application Date: 2012-09-27
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Publication No.: US08547737B2Publication Date: 2013-10-01
- Inventor: Tadaomi Daibou , Eiji Kitagawa , Yutaka Hashimoto , Masaru Tokou , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Makoto Nagamine , Tadashi Kai , Hiroaki Yoda
- Applicant: Tadaomi Daibou , Eiji Kitagawa , Yutaka Hashimoto , Masaru Tokou , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Makoto Nagamine , Tadashi Kai , Hiroaki Yoda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-208058 20100916
- Main IPC: G11C11/14
- IPC: G11C11/14

Abstract:
A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.
Public/Granted literature
- US20130020659A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY Public/Granted day:2013-01-24
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