Invention Grant
- Patent Title: Semiconductor device having sense amplifiers
- Patent Title (中): 具有读出放大器的半导体器件
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Application No.: US12929758Application Date: 2011-02-14
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Publication No.: US08547765B2Publication Date: 2013-10-01
- Inventor: Akira Ichinose
- Applicant: Akira Ichinose
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2010-037539 20100223
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A semiconductor device includes a plurality of memory cells connected to a word line, sense amplifiers arranged correspondingly to the memory cells, and a sense-amplifier control circuit that activates the sense amplifiers in response to selection of the word line and temporarily reduces driving performance of the sense amplifiers in response to a request for writing of data to any one of the memory cells. With this configuration, inverted data can be quickly overwritten to the sense amplifier. Furthermore, because a collective control is executed on the sense amplifiers to be activated, instead of individually controlling the sense amplifiers to be activated, the circuit scale of the sense-amplifier control circuit can be reduced.
Public/Granted literature
- US20110205821A1 Semiconductor device having sense amplifiers Public/Granted day:2011-08-25
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