Invention Grant
- Patent Title: Semiconductor laser module
- Patent Title (中): 半导体激光模块
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Application No.: US13280709Application Date: 2011-10-25
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Publication No.: US08548024B2Publication Date: 2013-10-01
- Inventor: Hideaki Hasegawa , Tatsuya Kimoto , Go Kobayashi
- Applicant: Hideaki Hasegawa , Tatsuya Kimoto , Go Kobayashi
- Applicant Address: JP Tokyo
- Assignee: Furukawa Electric Co., Ltd.
- Current Assignee: Furukawa Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Lowe Hauptman & Ham, LLP
- Priority: JP2011-030199 20110215
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A semiconductor laser module includes a semiconductor laser unit and a light selecting unit. The semiconductor laser unit includes a semiconductor laser substrate and a plurality of distributed reflector semiconductor laser devices formed on the semiconductor laser substrate in an array. Each of the distributed reflector semiconductor laser devices is configured to emit a laser light of a different wavelength from an output facet. The light selecting unit includes a light selecting device substrate and a light selecting device formed on the light selecting device substrate. The light selecting device is configured to selectively output a laser light emitted from a distributed reflector semiconductor laser device. The semiconductor laser unit and the light selecting unit are attached to each other in such a manner that the light selecting device is optically coupled to the distributed reflector semiconductor laser devices.
Public/Granted literature
- US20120207187A1 SEMICONDUCTOR LASER MODULE Public/Granted day:2012-08-16
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