Invention Grant
- Patent Title: SQUID magnetic sensor
- Patent Title (中): SQUID磁传感器
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Application No.: US13264027Application Date: 2010-04-13
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Publication No.: US08548542B2Publication Date: 2013-10-01
- Inventor: Yoshimi Hatsukade , Saburo Tanaka , Sho Kanai
- Applicant: Yoshimi Hatsukade , Saburo Tanaka , Sho Kanai
- Applicant Address: JP Toyohashi-shi Aichi
- Assignee: National University Corporation, Toyohashi University of Technology
- Current Assignee: National University Corporation, Toyohashi University of Technology
- Current Assignee Address: JP Toyohashi-shi Aichi
- Agency: Bacon & Thomas, PLLC
- Priority: JP2009-105709 20090423
- International Application: PCT/JP2010/002665 WO 20100413
- International Announcement: WO2010/122733 WO 20101028
- Main IPC: G01R33/035
- IPC: G01R33/035

Abstract:
There is provided a directly-coupled high-temperature superconductor SQUID magnetic sensor in a single thin film structure, which suppresses flux trapping or jumping generated in the sensor in a magnetic field, prevents the degradation in performance of the SQUID sensor, and operates stably with high sensitivity even in the magnetic field. The SQUID magnetic sensor including a bi-crystal substrate 1 having a bi-crystal grain boundary, pickup loops 7a-7d formed from a first high-temperature superconducting thin film on the bi-crystal substrate 1, and a SQUID ring 3 formed from the first high-temperature superconducting thin film on the bi-crystal grain boundary, directly connected with the pickup loops 7a-7d, wherein a plurality of pickup loops 7a-7d are disposed equally spaced from a bi-crystal grain boundary line 2 so as not to overlap with the bi-crystal grain boundary.
Public/Granted literature
- US20120053059A1 SQUID MAGNETIC SENSOR Public/Granted day:2012-03-01
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