Invention Grant
- Patent Title: Piezoelectric microspeaker and method of fabricating the same
- Patent Title (中): 压电式微型扬声器及其制造方法
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Application No.: US12428502Application Date: 2009-04-23
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Publication No.: US08549715B2Publication Date: 2013-10-08
- Inventor: Dong-kyun Kim , Seok-whan Chung , Byung-gil Jeong
- Applicant: Dong-kyun Kim , Seok-whan Chung , Byung-gil Jeong
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2008-0092844 20080922
- Main IPC: H01L41/22
- IPC: H01L41/22 ; H04R17/00 ; B21D53/76 ; B23P17/00

Abstract:
A piezoelectric microspeaker fabricated by a method including: forming a lower drive unit by forming a first drive electrode by depositing and etching a first thin conductive layer on a substrate, forming a first piezoelectric plate by depositing and etching a first piezoelectric layer on the first drive electrode, and forming a first common electrode by depositing and etching a second conductive layer on the first piezoelectric plate; after forming the lower drive unit, forming a diaphragm by depositing a non-conductive layer on the first common electrode; and forming an upper drive unit by forming a second common electrode by depositing and etching a third conductive layer on the diaphragm, forming a second piezoelectric plate by depositing and etching a second piezoelectric layer on the second common electrode, and forming a second drive electrode by depositing and etching a fourth conductive layer on the second piezoelectric plate.
Public/Granted literature
- US20100072860A1 PIEZOELECTRIC MICROSPEAKER AND METHOD OF FABRICATING THE SAME Public/Granted day:2010-03-25
Information query
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