Invention Grant
- Patent Title: Monolithic aluminum alloy target and method of manufacturing
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Application No.: US12736311Application Date: 2010-01-06
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Publication No.: US08551267B2Publication Date: 2013-10-08
- Inventor: Weifang Miao , David B. Smathers , Robert S. Bailey
- Applicant: Weifang Miao , David B. Smathers , Robert S. Bailey
- Applicant Address: US OH Grove City
- Assignee: Tosoh SMD, Inc.
- Current Assignee: Tosoh SMD, Inc.
- Current Assignee Address: US OH Grove City
- Agency: Wegman, Hessler & Vanderburg
- International Application: PCT/US2010/000021 WO 20100106
- International Announcement: WO2010/085316 WO 20100729
- Main IPC: C23C14/34
- IPC: C23C14/34

Abstract:
Aluminum or aluminum alloy sputter targets and methods of making same are provided. The pure aluminum or aluminum alloy is mechanically worked to produce a circular blank, and then the blank is given a recrystallization anneal to achieve desirable grain size and crystallographic texture. A 10-50% additional strain is provided to the blank step after the annealing to increase the mechanical strength. Further, in a flange area of the target, the strain is greater than in the other target areas with the strain in the flange area being imparted at a rate of about 20-60% strain. The blank is then finished to form a sputtering target with desirable crystallographic texture and adequate mechanical strength.
Public/Granted literature
- US20110056828A1 MONOLITHIC ALUMINUM ALLOY TARGET AND METHOD OF MANUFACTURING Public/Granted day:2011-03-10
Information query
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