Invention Grant
US08551363B2 Method of producing group II-VI compound semiconductor, method of producing group II-VI compound semiconductor phosphor, and hexagonal group II-VI compound semiconductor
失效
II-VI族化合物半导体的制造方法，II-VI族化合物半导体荧光体的制造方法以及六方晶系II-VI族化合物半导体
- Patent Title: Method of producing group II-VI compound semiconductor, method of producing group II-VI compound semiconductor phosphor, and hexagonal group II-VI compound semiconductor
- Patent Title (中): II-VI族化合物半导体的制造方法，II-VI族化合物半导体荧光体的制造方法以及六方晶系II-VI族化合物半导体
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Application No.: US12866561Application Date: 2009-02-05
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Publication No.: US08551363B2Publication Date: 2013-10-08
- Inventor: Tsutomu Mashimo , Omurzak Uulu Emil , Makoto Okamoto , Hideharu Iwasaki
- Applicant: Tsutomu Mashimo , Omurzak Uulu Emil , Makoto Okamoto , Hideharu Iwasaki
- Applicant Address: JP Kumamoto-shi JP Kurashiki-shi
- Assignee: National University Corporation Kumamoto University,Kuraray Co., Ltd.
- Current Assignee: National University Corporation Kumamoto University,Kuraray Co., Ltd.
- Current Assignee Address: JP Kumamoto-shi JP Kurashiki-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-026826 20080206
- International Application: PCT/JP2009/052352 WO 20090205
- International Announcement: WO2009/099250 WO 20090813
- Main IPC: C09K11/54
- IPC: C09K11/54 ; C09K11/56
Abstract:
A method of producing a Group II-VI compound semiconductor. The method involves generating a pulsed electrical discharge plasma between metallic electrodes in sulfur to produce a Group II-VI compound semiconductor. A method of producing a Group II-VI compound semiconductor phosphor using a pulsed electrical discharge plasma. A hexagonal crystal of Group II-VI compound semiconductor composed of a plurality of twin crystals.
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