Invention Grant
US08551369B2 Wiring material, method of manufacturing wiring, and nano-particle dispersion
有权
接线材料，制造布线的方法和纳米颗粒分散体
- Patent Title: Wiring material, method of manufacturing wiring, and nano-particle dispersion
- Patent Title (中): 接线材料，制造布线的方法和纳米颗粒分散体
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Application No.: US13250142Application Date: 2011-09-30
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Publication No.: US08551369B2Publication Date: 2013-10-08
- Inventor: Takamichi Fujii
- Applicant: Takamichi Fujii
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2010-224031 20101001
- Main IPC: H01B1/12
- IPC: H01B1/12 ; H01B1/02 ; B05D5/12
Abstract:
A wiring material contains copper, nitrogen, and a dopant which is more readily oxidized than copper in an Ellingham diagram, the dopant being added to the wiring material at a rate of not less than 0.5 at. % and not more than 10 at. %.
Public/Granted literature
- US20120082780A1 WIRING MATERIAL, METHOD OF MANUFACTURING WIRING, AND NANO-PARTICLE DISPERSION Public/Granted day:2012-04-05
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