Correction of critical dimension variation is accomplished with a second exposure, e.g. using a second reticle. Embodiments include exposing a first wafer with a first dose using a first reticle, having a pattern corresponding to a target pattern for a wafer, identifying CD variations between the exposed wafer and the target pattern for different features in the target pattern, exposing a second wafer with the first reticle using a second dose, less than or equal to the first dose, and correcting the CD variations by applying an additional exposure of the second wafer. Embodiments further include using one or more additional exposures to prevent printing unwanted structures on the reticle or to deliberately vary the sizes of selected structures on the wafer for development purposes.