Some embodiments include methods in which photolithographically-patterned photoresist features are used as templates during formation of a series of annular structures. The annular structures have linear segments. The linear segments are within a pattern having a pitch which is less than or equal to about half of a pitch of a pattern containing the photoresist features. An expanse of photoresist is formed across the annular structures. The expanse is photolithographically patterned to form chop patterns over ends of the annular structures, and to form at least one opening over at least one of the linear segments. The annular structures are etched while using the patterned photoresist expanse as a mask. In some embodiments, an opening in a photoresist expanse aligns to an edge of a linear segment through scum generated during photolithographic patterning of the photoresist expanse.