Invention Grant
US08551800B2 Methods of forming semiconductor structures including a movable switching element
有权
形成包括可移动开关元件的半导体结构的方法
- Patent Title: Methods of forming semiconductor structures including a movable switching element
- Patent Title (中): 形成包括可移动开关元件的半导体结构的方法
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Application No.: US13269859Application Date: 2011-10-10
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Publication No.: US08551800B2Publication Date: 2013-10-08
- Inventor: Gurtej S. Sandhu , Chandra V. Mouli
- Applicant: Gurtej S. Sandhu , Chandra V. Mouli
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/66
- IPC: H01L21/66

Abstract:
Semiconductor structures including a movable switching element having a base disposed on a conductive pad, a body extending from the base, and an end laterally adjacent and spaced apart from a conductive contact are disclosed. Upon application of a threshold voltage, the movable switching element may deform toward the conductive contact via an electrical field, establishing electrical contact between the conductive pad and the conductive contact. Various methods may be used to form such semiconductor structures, and switching devices including such semiconductor structures. Memory devices and electronic systems include such switching devices.
Public/Granted literature
- US20120064674A1 METHODS OF FORMING SEMICONDUCTOR STRUCTURES INCLUDING A MOVABLE SWITCHING ELEMENT Public/Granted day:2012-03-15
Information query
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