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US08551814B2 Method of fabricating a semiconductor device that limits damage to elements of the semiconductor device that are exposed during processing 有权
制造半导体器件的方法，其限制在处理期间暴露的半导体器件的元件的损坏

Method of fabricating a semiconductor device that limits damage to elements of the semiconductor device that are exposed during processing
Abstract:
A wafer structure (88) includes a device wafer (20) and a cap wafer (60). Semiconductor dies (22) on the device wafer (20) each include a microelectronic device (26) and terminal elements (28, 30). Barriers (36, 52) are positioned in inactive regions (32, 50) of the device wafer (20). The cap wafer (60) is coupled to the device wafer (20) and covers the semiconductor dies (22). Portions (72) of the cap wafer (60) are removed to expose the terminal elements (28, 30). The barriers (36, 52) may be taller than the elements (28, 30) and function to prevent the portions (72) from contacting the terminal elements (28, 30) when the portions (72) are removed. The wafer structure (88) is singulated to form multiple semiconductor devices (89), each device (89) including the microelectronic device (26) covered by a section of the cap wafer (60) and terminal elements (28, 30) exposed from the cap wafer (60).
Abstract(Chinese):

晶片结构（88）包括器件晶片（20）和盖晶片（60）。 器件晶片（20）上的半导体管芯（22）各自包括微电子器件（26）和端子元件（28,30）。 阻挡层（36,52）位于器件晶片（20）的非活性区域（32,50）中。 盖晶片（60）耦合到器件晶片（20）并覆盖半导体管芯（22）。 去除盖晶片（60）的部分（72）以露出端子元件（28,30）。 障碍物（36,52）可以比元件（28,30）更高，并且用于在部分（72）被移除时防止部分（72）接触端子元件（28,30）。 晶片结构（88）被单个化以形成多个半导体器件（89），每个器件（89）包括由盖晶片（60）的一部分覆盖的微电子器件（26）和从其暴露的端子元件（28,30） 盖晶片（60）。

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