Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13409234Application Date: 2012-03-01
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Publication No.: US08551854B2Publication Date: 2013-10-08
- Inventor: Shinjiro Kato , Hirofumi Harada
- Applicant: Shinjiro Kato , Hirofumi Harada
- Applicant Address: JP
- Assignee: Seiko Instruments Inc.
- Current Assignee: Seiko Instruments Inc.
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2011-046807 20110303
- Main IPC: H01L29/8605
- IPC: H01L29/8605
Abstract:
In a method of manufacturing a semiconductor device, a barrier metal film and an aluminum metal film are formed on an insulating film on a semiconductor substrate. Two aluminum electrodes are formed in parallel with each other by patterning the barrier metal film and the aluminum metal film. The aluminum metal film in a region of part of each of the two aluminum electrodes are selectively removed to form two single-layer barrier metal electrodes separated from each other. A resistor is formed between the two single-layer barrier metal electrodes so as to electrically connect the two single-layer barrier metal electrodes to each other.
Public/Granted literature
- US20120225535A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2012-09-06
Information query
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