Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
- Patent Title (中): 半导体装置及半导体装置的制造方法
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Application No.: US13787782Application Date: 2013-03-06
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Publication No.: US08551879B2Publication Date: 2013-10-08
- Inventor: Noboyuki Ohtsuka , Noriyoshi Shimizu
- Applicant: Fujitsu Semiconductor Limited
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A semiconductor device includes a first conductor formed over a semiconductor device; an insulation film formed over the semiconductor substrate and the first conductor and having an opening arriving at the first conductor; a first film formed in the opening and formed of a compound containing Zr; a second film formed over the first film in the opening and formed of an oxide containing Mn; and a second conductor buried in the opening and containing Cu.
Public/Granted literature
- US20130196503A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2013-08-01
Information query
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