Invention Grant
- Patent Title: Focused ion beam device and focused ion beam processing method
- Patent Title (中): 聚焦离子束装置和聚焦离子束处理方法
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Application No.: US13513256Application Date: 2010-11-15
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Publication No.: US08552397B2Publication Date: 2013-10-08
- Inventor: Yuichi Madokoro , Hirokazu Kaneoya , Tsuyoshi Onishi , Isamu Sekihara
- Applicant: Yuichi Madokoro , Hirokazu Kaneoya , Tsuyoshi Onishi , Isamu Sekihara
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JP2009-278104 20091208
- International Application: PCT/JP2010/006684 WO 20101115
- International Announcement: WO2011/070727 WO 20110616
- Main IPC: H01J3/28
- IPC: H01J3/28 ; G21K1/00

Abstract:
Disclosed is an operation for an optical system which achieves observation of focused ion beam processing equivalent to that in a case wherein a sample stage is tilted mechanically. In a focused ion beam optical system, an aperture, a tilting deflector, a beam scanner, and an objective lens are controlled so as to irradiate an ion beam tilted to the optical axis of the optical system, thereby achieving thin film processing and a cross section processing without accompanying adjustment and operation for a sample stage. The thin film processing and the cross section processing with a focused ion beam can be automated, and yield can be improved. For example, by applying the present invention to a cross section monitor to detect an end point, the cross section processing can be easily automated.
Public/Granted literature
- US20120235055A1 Focused Ion Beam Device and Focused Ion Beam Processing Method Public/Granted day:2012-09-20
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