Invention Grant
- Patent Title: Charged particle beam writing apparatus and charged particle beam writing method
- Patent Title (中): 带电粒子束写入装置和带电粒子束写入方法
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Application No.: US13647665Application Date: 2012-10-09
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Publication No.: US08552405B2Publication Date: 2013-10-08
- Inventor: Yasuo Kato , Jun Yashima
- Applicant: NuFlare Technology, Inc.
- Applicant Address: JP Numazu-shi
- Assignee: NuFlare Technology, Inc.
- Current Assignee: NuFlare Technology, Inc.
- Current Assignee Address: JP Numazu-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-230464 20111020
- Main IPC: H01J3/14
- IPC: H01J3/14 ; G21K5/10 ; G03C5/00

Abstract:
A charged particle beam writing apparatus includes a unit to calculate a gradient of a convolution amount that is calculated from a convolution operation between an area density and a distribution function, a unit to calculate a small influence radius phenomenon dose correction coefficient that corrects for dimension variation due to a phenomenon whose influence radius is on an order of microns or less, by using the convolution amount and the gradient, a unit to calculate a proximity effect dose correction coefficient that corrects for dimension variation due to a proximity effect, by using a first function depending on the small influence radius phenomenon dose correction coefficient, a unit to calculate a dose by using the proximity effect dose correction coefficient and the small influence radius phenomenon dose correction coefficient, and a unit to write a figure pattern concerned on a target object, based on the dose.
Public/Granted literature
- US20130099139A1 CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD Public/Granted day:2013-04-25
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