Invention Grant
- Patent Title: Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus
- Patent Title (中): 固态成像装置，制造固态成像装置的方法和成像装置
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Application No.: US12692982Application Date: 2010-01-25
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Publication No.: US08552415B2Publication Date: 2013-10-08
- Inventor: Atsushi Toda
- Applicant: Atsushi Toda
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Sheridan Ross P.C.
- Priority: JP2009-017470 20090129
- Main IPC: H01L31/18
- IPC: H01L31/18
Abstract:
A solid-state imaging device includes a first electrode, a second electrode disposed opposing to the first electrode, and a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a conductive layer, wherein one electrode of the first electrode and the second electrode is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode.
Public/Granted literature
- US20100187501A1 SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS Public/Granted day:2010-07-29
Information query
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