Invention Grant
US08552416B2 Quantum dot light emitting diode device and display device therewith
有权
量子点式发光二极管装置及其显示装置
- Patent Title: Quantum dot light emitting diode device and display device therewith
- Patent Title (中): 量子点式发光二极管装置及其显示装置
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Application No.: US13115537Application Date: 2011-05-25
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Publication No.: US08552416B2Publication Date: 2013-10-08
- Inventor: Young-Mi Kim , Ho-Cheol Kang , Ho-Jin Kim , Chang-Hee Lee , Kook-Heon Char , Seong-Hoon Lee , Jeong-Hun Kwak , Wan-Ki Bae , Dong-Gu Lee , Jae-Hoon Lim
- Applicant: Young-Mi Kim , Ho-Cheol Kang , Ho-Jin Kim , Chang-Hee Lee , Kook-Heon Char , Seong-Hoon Lee , Jeong-Hun Kwak , Wan-Ki Bae , Dong-Gu Lee , Jae-Hoon Lim
- Applicant Address: KR Seoul KR Seoul
- Assignee: LG Display Co., Ltd.,SNU R&DB Foundation
- Current Assignee: LG Display Co., Ltd.,SNU R&DB Foundation
- Current Assignee Address: KR Seoul KR Seoul
- Agency: Morgan, Lewis & Bockius LLP
- Priority: KR10-2010-0048569 20100525
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
The present invention relates to a quantum dot light emitting diode device in which a hole transportation layer is formed after forming a quantum dot light emitting layer by a solution process by applying an inverted type quantum dot light emitting diode device for making free selection of a hole transportation layer material that enables easy injection of a hole to the quantum dot light emitting layer; and display device and method therewith.
Public/Granted literature
- US20110291071A1 QUANTUM DOT LIGHT EMITTING DIODE DEVICE AND DISPLAY DEVICE THEREWITH Public/Granted day:2011-12-01
Information query
IPC分类:
