A power semiconductor device according to the present invention, which has a termination structure in which a field plate is provided on an insulating film filled in a recessed region formed in a semiconductor substrate and includes a plurality of unit cells connected in parallel, includes: a gate wiring region in which gate wiring electrically connected to each gate electrode of the plurality of unit cells is provided; and a gate pad region electrically connected to the gate wiring region, wherein the gate wiring region is disposed on the insulating film filled in a recessed region formed in the semiconductor substrate.