Invention Grant
- Patent Title: Proximity charge sensing for semiconductor detectors
- Patent Title (中): 半导体探测器的接近电荷感测
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Application No.: US12604173Application Date: 2009-10-22
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Publication No.: US08552429B2Publication Date: 2013-10-08
- Inventor: Paul N. Luke , Craig S. Tindall , Mark Amman
- Applicant: Paul N. Luke , Craig S. Tindall , Mark Amman
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Fulbright & Jaworski LLP
- Main IPC: H01L29/04
- IPC: H01L29/04

Abstract:
A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.
Public/Granted literature
- US20100102844A1 PROXIMITY CHARGE SENSING FOR SEMICONDUCTOR DETECTORS Public/Granted day:2010-04-29
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