Invention Grant
- Patent Title: Integrated circuit devices including vertical channel transistors with shield lines interposed between bit lines and methods of fabricating the same
- Patent Title (中): 集成电路器件,包括垂直沟道晶体管,屏蔽线插入位线之间,以及制造它们的方法
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Application No.: US13155688Application Date: 2011-06-08
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Publication No.: US08552472B2Publication Date: 2013-10-08
- Inventor: Hui-jung Kim , Yong-chul Oh , Yoo-sang Hwang , Hyun-woo Chung
- Applicant: Hui-jung Kim , Yong-chul Oh , Yoo-sang Hwang , Hyun-woo Chung
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2010-0056190 20100614
- Main IPC: H01L27/10
- IPC: H01L27/10 ; H01L29/778 ; H01L27/105

Abstract:
An integrated circuit device includes a plurality of pillars protruding from a substrate in a first direction. Each of the pillars includes source/drain regions in opposite ends thereof and a channel region extending between the source/drain regions. A plurality of conductive bit lines extends on the substrate adjacent the pillars in a second direction substantially perpendicular to the first direction. A plurality of conductive shield lines extends on the substrate in the second direction such that each of the shield lines extends between adjacent ones of the bit lines. Related fabrication methods are also discussed.
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