Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13515500Application Date: 2009-12-24
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Publication No.: US08552507B2Publication Date: 2013-10-08
- Inventor: Jiro Yugami
- Applicant: Jiro Yugami
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- International Application: PCT/JP2009/071492 WO 20091224
- International Announcement: WO2011/077536 WO 20110630
- Main IPC: H01L21/70
- IPC: H01L21/70
Abstract:
A p-type MIS transistor Qp arranged in a pMIS region Rp of a silicon substrate 1 includes a pMIS gate electrode GEp formed so as to interpose a pMIS gate insulating film GIp formed of a first insulating film z1 and a first high-dielectric film hk1, and an n-type MIS transistor Qn arranged in an nMIS region Rn includes an nMIS gate electrode GEn formed so as to interpose an nMIS gate insulating film GIn formed of a first insulating film z1 and a second high-dielectric film hk2. The first high-dielectric film hk1 is formed of an insulating film mainly made of hafnium and oxygen with containing aluminum, titanium, or tantalum. Also, the second high-dielectric film hk2 is formed of an insulating film mainly made of hafnium, silicon, and oxygen with containing an element of any of group Ia, group IIa, and group IIIa.
Public/Granted literature
- US20120248545A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-10-04
Information query
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