Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13215626Application Date: 2011-08-23
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Publication No.: US08552537B2Publication Date: 2013-10-08
- Inventor: Tatsuo Shimizu , Satoshi Itoh , Hideyuki Nishizawa
- Applicant: Tatsuo Shimizu , Satoshi Itoh , Hideyuki Nishizawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-054855 20110311
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L21/8238 ; H01L21/336 ; H01L21/20 ; H01L21/3205 ; G11C11/34
Abstract:
A semiconductor device according to an embodiment, includes a dielectric film and an Si semiconductor part. The dielectric film is formed by using one of oxide, nitride and oxynitride. The Si semiconductor part is arranged below the dielectric film, having at least one element of sulfur (S), selenium (Se), and tellurium (Te) present in an interface with the dielectric film, and formed by using silicon (Si).
Public/Granted literature
- US20120228694A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2012-09-13
Information query
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