Invention Grant
US08552545B2 Manufacturing method for semiconductor device, semiconductor device and semiconductor chip
有权
半导体器件,半导体器件和半导体芯片的制造方法
- Patent Title: Manufacturing method for semiconductor device, semiconductor device and semiconductor chip
- Patent Title (中): 半导体器件,半导体器件和半导体芯片的制造方法
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Application No.: US11085265Application Date: 2005-03-22
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Publication No.: US08552545B2Publication Date: 2013-10-08
- Inventor: Kazumasa Tanida , Mitsuo Umemoto , Yukiharu Akiyama
- Applicant: Kazumasa Tanida , Mitsuo Umemoto , Yukiharu Akiyama
- Applicant Address: JP Kyoto JP Tokyo
- Assignee: Rohm Co., Ltd.,Renesas Technology Corp.
- Current Assignee: Rohm Co., Ltd.,Renesas Technology Corp.
- Current Assignee Address: JP Kyoto JP Tokyo
- Agency: Rabin & Berdo, P.C.
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/48 ; H01L23/52

Abstract:
A manufacturing method for a semiconductor device includes: the step of preparing a semiconductor chip which is provided with a functional element formed on a front surface side of a semiconductor substrate, a feedthrough electrode which is placed within a through hole that penetrates the semiconductor substrate, a front surface side connection member which protrudes from the front surface, and a rear surface side connection member which has a joining surface within a recess that is formed in a rear surface; the step of preparing a solid-state device where a solid-state device side connection member for connection to the front surface side connection member is formed on one surface; and the joining step of making the front surface of the semiconductor chip face the first surface of the solid-state device by holding the rear surface of the semiconductor chip, and of joining the front surface side connection member to the solid-state device side connection member.
Public/Granted literature
- US20050230804A1 Manufacturing method for semiconductor device, semiconductor device and semiconductor chip Public/Granted day:2005-10-20
Information query
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