Invention Grant
- Patent Title: Very thick metal interconnection scheme in IC chips
- Patent Title (中): IC芯片中非常厚的金属互连方案
-
Application No.: US11087955Application Date: 2005-03-23
-
Publication No.: US08552559B2Publication Date: 2013-10-08
- Inventor: Mou-Shiung Lin , Chiu-Ming Chou , Chien-Kang Chou
- Applicant: Mou-Shiung Lin , Chiu-Ming Chou , Chien-Kang Chou
- Applicant Address: TW Hsinchu
- Assignee: Megica Corporation
- Current Assignee: Megica Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Seyfarth Shaw LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A new interconnection scheme is described, comprising both coarse and fine line interconnection schemes in an IC chip. The coarse metal interconnection, typically formed by selective electroplating technology, is located on top of the fine line interconnection scheme. It is especially useful for long distance lines, clock, power and ground buses, and other applications such as high Q inductors and bypass lines. The fine line interconnections are more appropriate to be used for local interconnections. The combined structure of coarse and fine line interconnections forms a new interconnection scheme that not only enhances IC speed, but also lowers power consumption.
Public/Granted literature
- US20060022343A1 Very thick metal interconnection scheme in IC chips Public/Granted day:2006-02-02
Information query
IPC分类: