Invention Grant
US08552650B2 Plasma formation region control apparatus and plasma processing apparatus 有权
等离子体形成区域控制装置和等离子体处理装置

  • Patent Title: Plasma formation region control apparatus and plasma processing apparatus
  • Patent Title (中): 等离子体形成区域控制装置和等离子体处理装置
  • Application No.: US12668787
    Application Date: 2008-07-12
  • Publication No.: US08552650B2
    Publication Date: 2013-10-08
  • Inventor: Yuji Ikeda
  • Applicant: Yuji Ikeda
  • Applicant Address: JP Kobe-shi, Hyogo
  • Assignee: Imagineering, Inc.
  • Current Assignee: Imagineering, Inc.
  • Current Assignee Address: JP Kobe-shi, Hyogo
  • Agency: Westerman, Hattori, Daniels & Adrian, LLP
  • Priority: JP2007-183751 20070712
  • International Application: PCT/JP2008/062635 WO 20080712
  • International Announcement: WO2009/008517 WO 20090115
  • Main IPC: H01J7/24
  • IPC: H01J7/24 C23C16/00
Plasma formation region control apparatus and plasma processing apparatus
Abstract:
There is provided a plasma formation region control apparatus, with which a large-scale plasma can be obtained under a high pressure with ease and at low cost. The plasma formation region control apparatus comprises a microwave oscillator, an antenna connected to the microwave oscillator, and controller for controlling the position of each of the microwave oscillator and the antenna. The controller positions the antenna towards a plasma formation region in accordance with a specification for a plasma region for respective points in time t; establishes a driving sequence for the microwave oscillator based on the temperature state of the specified plasma; and drives the microwave oscillator according to the driving sequence.
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