Invention Grant
US08552650B2 Plasma formation region control apparatus and plasma processing apparatus
有权
等离子体形成区域控制装置和等离子体处理装置
- Patent Title: Plasma formation region control apparatus and plasma processing apparatus
- Patent Title (中): 等离子体形成区域控制装置和等离子体处理装置
-
Application No.: US12668787Application Date: 2008-07-12
-
Publication No.: US08552650B2Publication Date: 2013-10-08
- Inventor: Yuji Ikeda
- Applicant: Yuji Ikeda
- Applicant Address: JP Kobe-shi, Hyogo
- Assignee: Imagineering, Inc.
- Current Assignee: Imagineering, Inc.
- Current Assignee Address: JP Kobe-shi, Hyogo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2007-183751 20070712
- International Application: PCT/JP2008/062635 WO 20080712
- International Announcement: WO2009/008517 WO 20090115
- Main IPC: H01J7/24
- IPC: H01J7/24 ; C23C16/00

Abstract:
There is provided a plasma formation region control apparatus, with which a large-scale plasma can be obtained under a high pressure with ease and at low cost. The plasma formation region control apparatus comprises a microwave oscillator, an antenna connected to the microwave oscillator, and controller for controlling the position of each of the microwave oscillator and the antenna. The controller positions the antenna towards a plasma formation region in accordance with a specification for a plasma region for respective points in time t; establishes a driving sequence for the microwave oscillator based on the temperature state of the specified plasma; and drives the microwave oscillator according to the driving sequence.
Public/Granted literature
- US20100186670A1 PLASMA FORMATION REGION CONTROL APPARATUS AND PLASMA PROCESSING APPARATUS Public/Granted day:2010-07-29
Information query