Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US13620803Application Date: 2012-09-15
-
Publication No.: US08552793B2Publication Date: 2013-10-08
- Inventor: Kenjyu Shimogawa , Hiroshi Furuta
- Applicant: Kenjyu Shimogawa , Hiroshi Furuta
- Applicant Address: JP Kawasaki, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2010-033710 20100218
- Main IPC: H03K3/01
- IPC: H03K3/01

Abstract:
A semiconductor integrated circuit device includes a functional circuit part that includes a plurality of field effect transistors, a mode control circuit that receives a first control signal and that generates a second control signal that is used to change a logic state of the functional circuit part, an output control circuit that receives an output signal of the functional circuit part and controls output of the output signal, and a control circuit that receives the second control signal and that generates a third control signal to the output control circuit. During a time period when the functional circuit part changes a logic state according to the second control signal, the output control circuit inverts the output signal of the functional circuit part according to the third control signal.
Public/Granted literature
- US08519774B2 Semiconductor device Public/Granted day:2013-08-27
Information query