Invention Grant
US08552815B2 High-frequency line structure for impedance matching a microstrip line to a resin substrate and method of making
有权
用于将微带线阻抗匹配到树脂基板的高频线路结构及其制造方法
- Patent Title: High-frequency line structure for impedance matching a microstrip line to a resin substrate and method of making
- Patent Title (中): 用于将微带线阻抗匹配到树脂基板的高频线路结构及其制造方法
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Application No.: US12787451Application Date: 2010-05-26
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Publication No.: US08552815B2Publication Date: 2013-10-08
- Inventor: Tomoharu Fujii , Yukari Chino
- Applicant: Tomoharu Fujii , Yukari Chino
- Applicant Address: JP Nagano
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano
- Agency: IPUSA, PLLC
- Priority: JP2009-136088 20090605
- Main IPC: H01P5/02
- IPC: H01P5/02

Abstract:
A high-frequency line structure includes a multi-layered resin substrate in which insulating layers of a resin are laminated. A high-frequency-signal input part is arranged on the resin substrate to input a high-frequency signal and supply the high-frequency signal to the resin substrate. A high-frequency-signal output part is arranged in the resin substrate to receive the high-frequency signal from the input part and output the received high-frequency signal. A first metal layer is arranged to encircle the input and output pads and electrically insulated from the input and output parts. A second metal layer is arranged on the resin substrate. A plurality of penetration vias are arranged in the resin substrate to encircle the input part and the output part, and each penetration via being connected to the first and second metal layers.
Public/Granted literature
- US20100308941A1 HIGH-FREQUENCY LINE STRUCTURE ON RESIN SUBSTRATE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-12-09
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