A magnetic element capable of detecting changes in magnetic states, such as for use as a read sensor in a data transducing head or as a solid-state non-volatile memory element. In accordance with various embodiments, the magnetic element includes a magnetically responsive stack or lamination with a first areal extent. The stack includes a spacer layer positioned between first and second ferromagnetic free layers. At least one antiferromagnetic (AFM) tab is connected to the first free layer on a surface thereof opposite the spacer layer, the AFM tab having a second areal extent that is less than the first areal extent.