Invention Grant
US08553443B2 Memory device and memory access method 有权
内存设备和内存访问方式

  • Patent Title: Memory device and memory access method
  • Patent Title (中): 内存设备和内存访问方式
  • Application No.: US13357712
    Application Date: 2012-01-25
  • Publication No.: US08553443B2
    Publication Date: 2013-10-08
  • Inventor: Biao Shen
  • Applicant: Biao Shen
  • Agency: Brinks Hofer Gilson & Lione
  • Priority: JP2009-006703 20090115
  • Main IPC: G11C17/00
  • IPC: G11C17/00
Memory device and memory access method
Abstract:
Provided is a memory device in which the circuit structure is simplified while the functions of a memory including an OTP memory and a memory including a pseudo-MTP memory are maintained. A memory device includes a plurality of memory sets each including a mark bit storage area for storing a mark bit, which indicates that an object is deleted data, and a data bit storage area for storing data, the memory device being built from an OTP memory including an OTP memory block and a pseudo-MTP memory block, the OTP memory block containing a given number of memory sets to operate as an OTP memory, the pseudo-MTP memory block containing the rest of the memory sets operates as a pseudo-MTP memory. The mark bit is written in advance in the mark bit storage area of the OTP memory block.
Public/Granted literature
Information query
Patent Agency Ranking
0/0