Invention Grant
- Patent Title: Memory device and memory access method
- Patent Title (中): 内存设备和内存访问方式
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Application No.: US13357712Application Date: 2012-01-25
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Publication No.: US08553443B2Publication Date: 2013-10-08
- Inventor: Biao Shen
- Applicant: Biao Shen
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2009-006703 20090115
- Main IPC: G11C17/00
- IPC: G11C17/00

Abstract:
Provided is a memory device in which the circuit structure is simplified while the functions of a memory including an OTP memory and a memory including a pseudo-MTP memory are maintained. A memory device includes a plurality of memory sets each including a mark bit storage area for storing a mark bit, which indicates that an object is deleted data, and a data bit storage area for storing data, the memory device being built from an OTP memory including an OTP memory block and a pseudo-MTP memory block, the OTP memory block containing a given number of memory sets to operate as an OTP memory, the pseudo-MTP memory block containing the rest of the memory sets operates as a pseudo-MTP memory. The mark bit is written in advance in the mark bit storage area of the OTP memory block.
Public/Granted literature
- US20120163062A1 MEMORY DEVICE AND MEMORY ACCESS METHOD Public/Granted day:2012-06-28
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