Invention Grant
US08553448B2 SRAM cells, memory circuits, systems, and fabrication methods thereof
有权
SRAM单元，存储器电路，系统及其制造方法
- Patent Title: SRAM cells, memory circuits, systems, and fabrication methods thereof
- Patent Title (中): SRAM单元，存储器电路，系统及其制造方法
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Application No.: US13609930Application Date: 2012-09-11
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Publication No.: US08553448B2Publication Date: 2013-10-08
- Inventor: Chen Hung Lee , Hung-Jen Liao
- Applicant: Chen Hung Lee , Hung-Jen Liao
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A static random access memory (SRAM) cell includes a pair of cross-coupled inverters having a first node and a second node. A first transistor is coupled between the first node and a first bit line. A second transistor is coupled between the second node and a second bit line. A third transistor is coupled with the first node. The third transistor has a threshold voltage that is higher than that of a fourth transistor of the pair of cross-coupled inverters by about 10% or more. A fifth transistor is coupled between the third transistor and a third bit line.
Public/Granted literature
- US20130003445A1 SRAM CELLS, MEMORY CIRCUITS, SYSTEMS, AND FABRICATION METHODS THEREOF Public/Granted day:2013-01-03
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