Invention Grant
- Patent Title: Nonvolatile programmable logic switch
- Patent Title (中): 非易失性可编程逻辑开关
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Application No.: US13240087Application Date: 2011-09-22
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Publication No.: US08553464B2Publication Date: 2013-10-08
- Inventor: Yoshifumi Nishi , Daisuke Hagishima , Shinichi Yasuda , Tetsufumi Tanamoto , Takahiro Kurita , Atsuhiro Kinoshita , Shinobu Fujita
- Applicant: Yoshifumi Nishi , Daisuke Hagishima , Shinichi Yasuda , Tetsufumi Tanamoto , Takahiro Kurita , Atsuhiro Kinoshita , Shinobu Fujita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JPP2011-065269 20110324
- Main IPC: G11C11/35
- IPC: G11C11/35

Abstract:
An aspect of the present embodiment, there is provided a nonvolatile programmable logic switch including a first memory cell transistor, a second memory cell transistor, a pass transistor and a first substrate electrode applying a substrate voltage to the pass transistor, wherein a writing voltage is applied to the first wiring, a first voltage is applied to one of a second wiring and a third wiring and a second voltage which is lower than the first voltage is applied to the other of the second wiring and the third wiring, and the first substrate voltage which is higher than the second voltage and lower than the first voltage is applied to a well of the pass transistor, when data is written into the first memory cell transistor or the second memory cell transistor.
Public/Granted literature
- US20120243336A1 NONVOLATILE PROGRAMMABLE LOGIC SWITCH Public/Granted day:2012-09-27
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