A three dimensional monolithic memory array of non-volatile storage elements includes a plurality of word lines and a plurality of bit lines. The plurality of bit lines are grouped into columns. One page of data is stored across multiple word lines by programming non-volatile storage elements connected to one column of bit lines and multiple word lines while maintaining the selection of the one column of bit lines. In one embodiment, programming non-volatile storage elements includes selectively connecting bit lines to sense amplifiers using selection circuits that include a storage device, a select circuit connected to the storage device and one or more level shifters providing two or more interfaces to the respective selection circuit.