Invention Grant
- Patent Title: Semiconductor device having point-shift type FIFO circuit
- Patent Title (中): 具有点移型FIFO电路的半导体器件
-
Application No.: US13317601Application Date: 2011-10-24
-
Publication No.: US08553489B2Publication Date: 2013-10-08
- Inventor: Hiroki Fujisawa , Yuuji Motoyama
- Applicant: Hiroki Fujisawa , Yuuji Motoyama
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2010-257160 20101117
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
For example, a semiconductor device includes latch circuits, whose input nodes are connected to an input selection circuit and whose output nodes are connected to an output selection circuit; and a control circuit, which controls the input selection circuit and the output selection circuit. The control circuit includes a shift register to generate an input pointer signal and a binary counter to generate an output pointer signal. The input selection circuit selects one of the latch circuits on the basis of a value of the input pointer signal. The output selection circuit selects one of the latch circuits on the basis of a value of the output pointer signal. Therefore, it is possible to prevent a hazard from occurring in the input selection circuit, as well as to reduce the number of signal lines that transmit the output pointer signal.
Public/Granted literature
- US20120120753A1 Semiconductor device having point-shift type FIFO circuit Public/Granted day:2012-05-17
Information query