Invention Grant
US08553740B2 Method of driving GaN-based semiconductor light emitting element, method of driving GaN-based semiconductor light emitting element of image display device, method of driving planar light source device, and method of driving light emitting device
有权
驱动GaN基半导体发光元件的方法，驱动图像显示装置的GaN基半导体发光元件的方法，驱动平面光源器件的方法以及驱动发光器件的方法
- Patent Title: Method of driving GaN-based semiconductor light emitting element, method of driving GaN-based semiconductor light emitting element of image display device, method of driving planar light source device, and method of driving light emitting device
- Patent Title (中): 驱动GaN基半导体发光元件的方法，驱动图像显示装置的GaN基半导体发光元件的方法，驱动平面光源器件的方法以及驱动发光器件的方法
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Application No.: US12709828Application Date: 2010-02-22
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Publication No.: US08553740B2Publication Date: 2013-10-08
- Inventor: Ippei Nishinaka
- Applicant: Ippei Nishinaka
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: K&L Gates, LLP
- Priority: JPP2009-051776 20090305
- Main IPC: H01S5/042
- IPC: H01S5/042 ; H01S5/06
Abstract:
A method of driving a GaN-based semiconductor light emitting element formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, includes the steps of: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before a light emission luminance value becomes constant.
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