Invention Grant
US08553843B2 Attachment of a high-Z focal track layer to a carbon-carbon composite substrate serving as a rotary anode target
失效
将高Z焦点轨道层附着到用作旋转阳极靶的碳 - 碳复合基底上
- Patent Title: Attachment of a high-Z focal track layer to a carbon-carbon composite substrate serving as a rotary anode target
- Patent Title (中): 将高Z焦点轨道层附着到用作旋转阳极靶的碳 - 碳复合基底上
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Application No.: US13139349Application Date: 2009-12-14
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Publication No.: US08553843B2Publication Date: 2013-10-08
- Inventor: Michael David Drory
- Applicant: Michael David Drory
- Applicant Address: NL Eindhoven
- Assignee: Koninklijke Philips N.V.
- Current Assignee: Koninklijke Philips N.V.
- Current Assignee Address: NL Eindhoven
- International Application: PCT/IB2009/055740 WO 20091214
- International Announcement: WO2010/070574 WO 20100624
- Main IPC: H01J35/10
- IPC: H01J35/10 ; H01J35/08

Abstract:
The present invention refers to hybrid anode disk structures for use in X-ray tubes of the rotary anode type and is concerned more particularly with a novel light weight anode disk structure (RA) which comprises an adhesion promoting protective silicon carbide (SiC) interlayer (SCI) deposited onto a rotary X-ray tube's anode target (AT), wherein the latter may e.g. be made of a carbon-carbon composite substrate (SUB′). Moreover, a manufacturing method for robustly attaching a coating layer (CL) consisting of a high-Z material (e.g. a layer made of a tungsten-rhenium alloy) on the surface of said anode target is provided, whereupon according to said method it may be foreseen to apply a refractory metal overcoating layer (RML), such as given e.g. by a tantalum (Ta), hafnium (Hf), vanadium (V) or rhenium (Re) layer, to the silicon carbide interlayer (SCI) prior to the deposition of the tungsten-rhenium alloy. The invention thus leverages the tendency for cracking of the silicon carbide coated carbon composite substrate (SUB′) during thermal cycling and enhances adhesion of the silicon carbide/refractory metal interlayers to the carbon-carbon composite substrate (SUB′) and focal track coating layer (CL) by an interlocking mechanism. Key aspects of the proposed invention are: a) controlled formation of coating cracks (SC) in the silicon carbide layer (SCI) and b) conformal filling of SiC crack openings with a refractory metal.
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