Invention Grant
US08554161B2 Circuit and method for biasing a gallium arsenide (GaAs) power amplifier
有权
用于偏置砷化镓（GaAs）功率放大器的电路和方法
- Patent Title: Circuit and method for biasing a gallium arsenide (GaAs) power amplifier
- Patent Title (中): 用于偏置砷化镓（GaAs）功率放大器的电路和方法
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Application No.: US12958453Application Date: 2010-12-02
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Publication No.: US08554161B2Publication Date: 2013-10-08
- Inventor: Ziv Alon , Shiaw W. Chang , Andre Metzger
- Applicant: Ziv Alon , Shiaw W. Chang , Andre Metzger
- Applicant Address: US MA Wobum
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Wobum
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01Q11/12
- IPC: H01Q11/12 ; H04B1/04
Abstract:
A circuit for biasing a gallium arsenide (GaAs) power amplifier includes a reference voltage generator circuit implemented in a gallium arsenide (GaAs) material system, a field effect transistor (FET) bias circuit implemented in the gallium arsenide material system and adapted to receive an output of the reference voltage generator circuit and adapted to provide an output to a radio frequency (RF) amplifier stage.
Public/Granted literature
- US20110074512A1 CIRCUIT AND METHOD FOR BIASING A GALLIUM ARSENIDE (GaAs) POWER AMPLIFIER Public/Granted day:2011-03-31
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