Invention Grant
- Patent Title: High efficiency power amplifier
- Patent Title (中): 高效率功率放大器
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Application No.: US13197022Application Date: 2011-08-03
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Publication No.: US08554162B2Publication Date: 2013-10-08
- Inventor: Jonas Lindstrand , Carl Bryant , Henrik Sjöland
- Applicant: Jonas Lindstrand , Carl Bryant , Henrik Sjöland
- Applicant Address: CH Plan-les-Ouates
- Assignee: ST-Ericsson SA
- Current Assignee: ST-Ericsson SA
- Current Assignee Address: CH Plan-les-Ouates
- Agency: Coats & Bennett, P.L.L.C.
- Main IPC: H01Q11/12
- IPC: H01Q11/12 ; H04B1/04 ; H03F3/45 ; H03F3/16

Abstract:
A power amplifier circuit utilizes a cross-coupled tapped cascade topology together with a technique of applying an RF injection current into a wideband node to provide a single-stage power amplifier with improved PAE, output power, and gain over a wide RF band. The amplifier circuit comprises a cross-coupled cascade transistor unit comprising a pair of cross-coupled cascode transistors, a cross-coupled switching transistor unit comprising a pair of cross-coupled switching transistors, and an RF current generator. RF current generator generates a differential RF injection current, while switching transistor unit amplifies the injection current to generate an amplified injection current at the wideband node of the amplifier circuit and the cascode transistor unit further amplifies the injection current to generate the desired amplified signal at the output of the amplifier circuit. The output signal amplitude generally depends on the differential injection current and the supply voltage VDD applied to the power amplifier circuit.
Public/Granted literature
- US20130033321A1 HIGH EFFICIENCY POWER AMPLIFIER Public/Granted day:2013-02-07
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