Invention Grant
- Patent Title: High speed interface for dynamic random access memory (DRAM)
- Patent Title (中): 用于动态随机存取存储器(DRAM)的高速接口
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Application No.: US13023991Application Date: 2011-02-09
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Publication No.: US08554991B2Publication Date: 2013-10-08
- Inventor: Larry J. Thayer
- Applicant: Larry J. Thayer
- Applicant Address: SG Singapore
- Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G11C5/08

Abstract:
An interface for a dynamic random access memory (DRAM) includes an interface element coupled to a DRAM chip using a first attachment structure, a first portion of the first attachment structure being used to form a wide bandwidth, low speed, parallel interface, a second portion of the first attachment structure, a routing element and a through silicon via (TSV) associated with the DRAM chip being used to form a narrow bandwidth, high speed, serial interface, the interface element configured to convert parallel information to serial information and configured to convert serial information to parallel information.
Public/Granted literature
- US20120203961A1 HIGH SPEED INTERFACE FOR DYNAMIC RANDOM ACCESS MEMORY (DRAM) Public/Granted day:2012-08-09
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