Invention Grant
- Patent Title: Memory power supply control circuit
- Patent Title (中): 内存电源控制电路
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Application No.: US12967021Application Date: 2010-12-13
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Publication No.: US08555092B2Publication Date: 2013-10-08
- Inventor: Ying-Bin Fu , Lan-Yi Feng
- Applicant: Ying-Bin Fu , Lan-Yi Feng
- Applicant Address: CN Shenzhen TW New Taipei
- Assignee: Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd.,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd.,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Shenzhen TW New Taipei
- Agency: Altis & Wispro Law Group, Inc.
- Priority: CN201010573099 20101204
- Main IPC: G06F1/00
- IPC: G06F1/00 ; G06F1/26 ; G06F1/32 ; G05F1/00

Abstract:
A memory power supply control circuit includes a number of memory slots, a platform controller hub (PCH), a first synchronous rectification driver, a number of second synchronous rectification drivers, and a complex programmable logic device (CPLD). The PCH is connected to the memory slots. The first synchronous rectification driver maintains a working state at all time. The CPLD is connected between the PCH and the second synchronous rectification drivers. The CPLD receives information from the PCH to determine a number of used memory slots, and controls the working states of the second synchronous rectification drivers according to the number of used memory slots.
Public/Granted literature
- US20120144212A1 MEMORY POWER SUPPLY CONTROL CIRCUIT Public/Granted day:2012-06-07
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