Invention Grant
- Patent Title: Structure for electrically tunable resistor
- Patent Title (中): 电可调谐电阻的结构
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Application No.: US12100592Application Date: 2008-04-10
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Publication No.: US08555216B2Publication Date: 2013-10-08
- Inventor: Icho E. T. Iben , Alvin W. Strong
- Applicant: Icho E. T. Iben , Alvin W. Strong
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent Anthony J. Canale
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A design structure for an electrically tunable resistor. In one embodiment, the design structure is embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, and includes a resistor including: a first resistive layer; at least one second resistive layer; and an intermediate interdiffused layer of the first resistive layer and the at least one second resistive layer.
Public/Granted literature
- US20080237590A1 DESIGN STRUCTURE FOR ELECTRICALLY TUNABLE RESISTOR Public/Granted day:2008-10-02
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