Invention Grant
US08559253B2 Variable-resistance memory device with charge sharing that discharges pre-charge voltage of a selected bit line to share charge with unselected bit lines
失效
具有电荷共享的可变电阻存储器件，其放电所选位线的预充电电压以与未选择的位线共享电荷
- Patent Title: Variable-resistance memory device with charge sharing that discharges pre-charge voltage of a selected bit line to share charge with unselected bit lines
- Patent Title (中): 具有电荷共享的可变电阻存储器件，其放电所选位线的预充电电压以与未选择的位线共享电荷
-
Application No.: US13067933Application Date: 2011-07-08
-
Publication No.: US08559253B2Publication Date: 2013-10-15
- Inventor: Makoto Kitagawa , Hiroshi Yoshihara
- Applicant: Makoto Kitagawa , Hiroshi Yoshihara
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2010-170934 20100729
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A variable-resistance memory device that includes a memory-cell array employing a plurality of memory cells each including a storage element and an access transistor. The storage element has a resistance varying in accordance with the direction of a voltage applied to the storage element and the access transistor is connected in series to the storage element between a bit line and a source line. A voltage supplying circuit sets a read voltage used for reading out the resistance of the storage element on a selected bit line connected to the memory cell serving as a read object in an operation to supply the read voltage to the selected bit line.
Public/Granted literature
- US20120026777A1 Variable-resistance memory device Public/Granted day:2012-02-02
Information query
