Invention Grant
US08563226B2 Mould for galvanoplasty and method of fabricating the same 有权
电铸成形术的模具及其制造方法

Mould for galvanoplasty and method of fabricating the same
Abstract:
The invention relates to a method (3) of fabricating a mold (39, 39′) including the following steps: (a) depositing (9) an electrically conductive layer on the top (20) and bottom (22) of a wafer (21) made of silicon-based material; (b) securing (13) the wafer to a substrate (23) using an adhesive layer; (c) removing (15) one part (26) of the conductive layer from the top of the wafer (21); and (d) etching (17) the wafer as far as the bottom conductive layer (22) thereof in the shape (26) of the one part removed from the top conductive layer (22) to form at least one cavity (25) in the mold. The invention concerns the field of micromechanical parts, particularly, for timepiece movements.
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