Invention Grant
US08564036B2 Photodetector for detecting energy line in a first wavelength region and in a second wavelength region
有权
光检测器，用于检测第一波长区域和第二波长区域中的能量线
- Patent Title: Photodetector for detecting energy line in a first wavelength region and in a second wavelength region
- Patent Title (中): 光检测器，用于检测第一波长区域和第二波长区域中的能量线
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Application No.: US13383282Application Date: 2010-07-07
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Publication No.: US08564036B2Publication Date: 2013-10-22
- Inventor: Yoshihisa Warashina , Masatoshi Ishihara , Tomofumi Suzuki
- Applicant: Yoshihisa Warashina , Masatoshi Ishihara , Tomofumi Suzuki
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: Hamamatsu Photonics K.K.
- Current Assignee: Hamamatsu Photonics K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JPP2009-164766 20090713
- International Application: PCT/JP2010/061549 WO 20100707
- International Announcement: WO2011/007703 WO 20110120
- Main IPC: H01L31/0232
- IPC: H01L31/0232
Abstract:
In a photodetector 1, a low-resistance Si substrate 3, an insulating layer 4, a high-resistance Si substrate 5, and an Si photodiode 20 construct a hermetically sealed package for an InGaAs photodiode 30 placed within a recess 6, while an electric passage part 8 of the low-resistance Si substrate 3 and a wiring film 15 achieve electric wiring for the Si photodiode 20 and InGaAs photodiode 30. While a p-type region 22 of the Si photodiode 20 is disposed in a part on the rear face 21b side of an Si substrate 21, a p-type region 32 of the InGaAs photodiode 30 is disposed in a part on the front face 31a side of an InGaAs substrate 31.
Public/Granted literature
- US20120187517A1 PHOTODETECTOR Public/Granted day:2012-07-26
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