Invention Grant
US08564701B2 Solid-state imaging device having a buried photodiode and a buried floating diffusion positioned for improved signal charge transfer, and electronic apparatus including the solid-state imaging device
有权
具有掩埋光电二极管和定位用于改善信号电荷转移的掩埋浮动扩散的固态成像器件，以及包括固态成像器件的电子设备
- Patent Title: Solid-state imaging device having a buried photodiode and a buried floating diffusion positioned for improved signal charge transfer, and electronic apparatus including the solid-state imaging device
- Patent Title (中): 具有掩埋光电二极管和定位用于改善信号电荷转移的掩埋浮动扩散的固态成像器件，以及包括固态成像器件的电子设备
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Application No.: US12839440Application Date: 2010-07-20
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Publication No.: US08564701B2Publication Date: 2013-10-22
- Inventor: Taiichiro Watanabe , Kazufumi Watanabe
- Applicant: Taiichiro Watanabe , Kazufumi Watanabe
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Sheridan Ross P.C.
- Priority: JP2009-174578 20090727
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/335
Abstract:
A solid-state imaging device includes a pixel including a buried photodiode formed inside a substrate, a buried floating diffusion formed at a depth equal to that of the buried photodiode in the substrate so as to face a bottom of a trench portion formed in the substrate, and a buried gate electrode formed at the bottom of the trench portion in order to transfer a signal charge from the buried photodiode to the buried floating diffusion.
Public/Granted literature
- US20110019063A1 SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS Public/Granted day:2011-01-27
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