Invention Grant
- Patent Title: Pass gate off isolation
- Patent Title (中): 通关门隔离
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Application No.: US13028731Application Date: 2011-02-16
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Publication No.: US08564918B2Publication Date: 2013-10-22
- Inventor: Nickole Gagne , Kenneth P. Snowdon
- Applicant: Nickole Gagne , Kenneth P. Snowdon
- Applicant Address: US CA San Jose
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Agency: Schwegman Lundberg Woessner P.A.
- Main IPC: H02H3/00
- IPC: H02H3/00

Abstract:
This document discusses methods and apparatus for preventing or reducing sub-threshold pass gate leakage. In an example, an apparatus can include a pass gate configured to electrically couple a first node with a second node in a first state and to electrically isolate the first node from the second node in a second state, control logic configured to control the pass gate, wherein the control logic includes a supply rail, and an over-voltage circuit configured to compare voltages received at a plurality of input nodes and to couple an output to an input node a highest voltage. In an example, the output of over-voltage circuit can be selectively coupled to the supply rail.
Public/Granted literature
- US20120206845A1 PASS GATE OFF ISOLATION Public/Granted day:2012-08-16
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