Invention Grant
- Patent Title: Method of pumping quantum dots
- Patent Title (中): 泵浦量子点的方法
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Application No.: US12961631Application Date: 2010-12-07
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Publication No.: US08565281B2Publication Date: 2013-10-22
- Inventor: Patanjali Kambhampati , Ryan Cooney , Samuel Sewall
- Applicant: Patanjali Kambhampati , Ryan Cooney , Samuel Sewall
- Applicant Address: CA Montreal
- Assignee: The Royal Institute for the Advancement of Learning/McGill University
- Current Assignee: The Royal Institute for the Advancement of Learning/McGill University
- Current Assignee Address: CA Montreal
- Agency: The Law Office of Michael E. Kondoudis
- Main IPC: H01S3/091
- IPC: H01S3/091

Abstract:
Strongly confined semiconductor quantum dots theoretically offer for broadband and continuous tunability of their emitting wavelength based upon simply varying the particle size. However, prior art consistently has demonstrated a lower particle size limit below which optical gain cannot be achieved, for example 2.3 nm for CdSe in toluene. As such the prior art points to combinations of alternative materials and host media as the route to achieving the goal of broadband emission sources using quantum dots. However, according to the invention optical gain can be achieved in quantum dots below these previous experimental limits by resonantly pumping the quantum dots to a specific excitonic state, i.e. electron position relative to the quantum dot, such that the multiexcitonic interferences are minimized. Using this approach optical gain in CdSe of R=2.1 nm and 1.5 nm has been demonstrated in the yellow/amber region of the visible spectrum.
Public/Granted literature
- US20110133100A1 METHOD OF PUMPING QUANTUM DOTS Public/Granted day:2011-06-09
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