Invention Grant
- Patent Title: Power amplifier and semiconductor integrated circuit
- Patent Title (中): 功率放大器和半导体集成电路
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Application No.: US12886699Application Date: 2010-09-21
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Publication No.: US08565341B2Publication Date: 2013-10-22
- Inventor: Shouhei Kousai
- Applicant: Shouhei Kousai
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Priority: JP2010-67752 20100324
- Main IPC: H04K1/02
- IPC: H04K1/02

Abstract:
In general, according to one embodiment, a power amplifier includes an envelope detector, a limiter, and a combiner. The envelope detector is configured to sense an envelope component of an input signal. The limiter includes a PMOS (Positive channel Metal Oxide Semiconductor) transistor and an NMOS (Negative channel Metal Oxide Semiconductor) transistor. The PMOS transistor is configured to sense a phase component of the input signal. The phase component has a second-order distortion controlled within a predetermined range with respect to the input signal. The NMOS transistor is configured to sense a phase component of the input signal. The phase component has the same second-order distortion as the phase component sensed by the PMOS transistor. The combiner is configured to combine the envelope component sensed by the envelope detector and the phase component sensed by the limiter to generate an output signal.
Public/Granted literature
- US20110235689A1 POWER AMPLIFIER AND SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2011-09-29
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