Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13062262Application Date: 2009-10-05
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Publication No.: US08569892B2Publication Date: 2013-10-29
- Inventor: Kentaro Mori , Daisuke Ohshima , Shintaro Yamamichi , Hideya Murai , Katsumi Maeda , Katsumi Kikuchi , Yoshiki Nakashima
- Applicant: Kentaro Mori , Daisuke Ohshima , Shintaro Yamamichi , Hideya Murai , Katsumi Maeda , Katsumi Kikuchi , Yoshiki Nakashima
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2008-264141 20081010
- International Application: PCT/JP2009/067349 WO 20091005
- International Announcement: WO2010/041630 WO 20100415
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/10

Abstract:
A semiconductor device includes: at least one semiconductor element having electrode terminals; a metal plate supporting the semiconductor element; and a wiring board covering the semiconductor element and including a plurality of insulating layers and wiring layers alternately stacked and external connection terminals on a surface, the wiring layers being electrically connected to each other by vias. The electrode terminals and the external connection terminals are electrically connected via at least one of the wiring layers and the vias. At least one of the electrode terminals, the is wiring layers, and the vias is electrically connected to the metal plate.
Public/Granted literature
- US20110175213A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-07-21
Information query
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